Abstract
Transparent semiconducting ITO:Ti thin films, prepared by a sol–gel process, has been deposited by spin-coating technique onto alkali-free glass substrates. The as-coated films were annealed in ambient air at 550 °C for 1 h and further annealed in a reducing atmosphere. The influences of the Ti content in the sol on the surface morphology, microstructure, optical properties and electrical resistivity have been investigated. These properties were found to depend on the Ti content in the coating sol. Ti addition led to dense smooth layers with larger crystallite size (20–30 nm). Double layers synthesized with Ti:ITO = 0.53 wt% and submitted to reducing treatment in forming gas exhibited the lowest sheet resistance R□ = 60 Ω□ with an average transmittance of 87% at 550 nm.
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