Novel charge injection transistors with heterojunction source (launcher) and drain (blocker) configurations

Abstract

The results of a theoretical study of novel charge injection transistors (CHINTs) with heterojunction source and drain are presented. The proposed device structures employ a wide band-gap (with respect to the channel) material as the device source and/or drain regions, in contrast to the conventional, homojunction source (drain) CHINT structure. It is demonstrated that the spatial location of real-space transfer (RST) is strongly dependent on the initial energy of injected electrons in these devices. The introduction of source and drain heterojunctions serves for enhancing the RST effect and for the blocking electrons which constitute leakage current. Results from two-dimensional, self-consistent ensemble Monte Carlo simulations reveal that the proposed CHINTs feature increased current drive capability, reduced drain leakage current, and faster switching speed.