Novel characteristics of the polysilicon high-low-emitter (PHL-emitter) bipolar transistor—High current gain and zero activation energy

Abstract

The polysilicon high-low-emitter (PHL-emitter) bipolar transistor with high current gain and zero activation energy at a certain collector current has been fabricated and characterized. It is shown that the higher current gain is mainly due to the narrower base width using the n − implant and the selectively implanted collector. However, the zero activation energy of the current gain at a certain collector current is caused by the two-dimensional flow of the base current. These features are very useful for analog circuit applications where the zero temperature-dependent current gain is required.