Abstract
An efficient “in situ growth” strategy was exploited to create the g-C3N4 nanosheets (NSs) and CdS nanorods (NRs) 1-D/2-D hybrid architectures, i.e. CdS NRs/g-C3N4 NSs nanocomposites, from cadmium-containing carbon nitride nanosheets (Cd/g-C3N4) compounds. The novel polymer/semiconductor hybrid material demonstrates very high photoelectrochemical response under visible light irradiation. The CdS NRs/g-C3N4 NSs electrode displays the largest photocurrent (about 100 μA/cm2), which is about 30 times compared with that of pristine g-C3N4 electrode (about 3.5 μA/cm2). The maximum incident photon-to-electron conversion efficiency (IPCE) value is up to 27 % for CdS NRs/g-C3N4 NSs electrode, which is much higher than that of pristine g-C3N4 electrode (1.2 %). The elevated photoelectrochemical performances are originated from the direct physical and electronic contact between the interfaces of the two semiconductor nanomaterials.
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