Abstract
The properties of single quantum well (SQW) structures on (111)A GaAs grown by molecular beam epitaxy (MBE) have been investigated. The interface abruptness of SQWs is estimated to be less than one monolayer through full width at half maximum measurements of photoluminescence. The novel lateral p-n junctions have been formed by MBE growth of silicon-doped GaAs on (111)A substrates patterned with equilateral triangles on the basis of these high-quality (111)A GaAs films. The idea of the lateral p-n junctions with a triangular p-type region bounded by three equivalent n-type slopes is based on the threefold symmetry of the (111)A surface and the acceptor nature of the silicon dopant on that surface. The lateral p-n junctions have been confirmed spatially-resolved cathodeluminescence and current-voltage measurements.
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