Abstract
AbstractWe proposed a new carbon source, 1,3-disilabutane (H3Si-CH2-SiH2-CH3:1,3-DSB), to grow hydrogenated amorphous silicon carbide (a-SiC:H) films by mercury-sensitized photochemical vapor deposition (photo-CVD). We described preliminary results of undoped and p-type a-SiC films deposited using 1,3-DSB. It was found that the optical energy gap of the films was changed even at very small 1,3-DSB/silane ratios of few percents. P-type doping was carried out by using diborane and we obtained the films with a darkconductivity of 1.3x10-4 S/cm at the optical bandgap of 2.1 eV. In addition, we applied this material for a p-layer of a p-i-n type a-Si based solar cell and we have achieved relatively high conversion efficiency of 9.55%.
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