Novel carbon nanotube model for low energy loss field-effect transistor

Soheli Farhana,Hugh Gong

doi:10.1080/23311916.2017.1300082

Abstract

AbstractCarbon nanotube (CNT) shows excellent and novel performances in the field of electrical engineering. The electrical properties of CNT consist of exceptional behaviour that will help to manufacture very tiny semiconductor device. However, due to the lack of research, CNT is still competing with the silicon material in the semiconductor industry. In this research, a single walled CNT wrapping diameter of 1.95 nm is proposed such a way that it performs low energy consumption while it is acting as a channel material of a field-effect transistor. A set of electrical properties of CNT is analyzed to propose a novel model of the nanotube that exhibits low energy consumption compare to other electronics devices. Finally the CNT has been replaced with the silicon in the channel of a field-effect transistor that shows low energy consumption.

Highlights

Reduction of energy loss in a semiconductor device becomes more challenging task a day
Dr Soheli Farhana serves as Post-Doctoral Fellow at International Islamic University Malaysia (IIUM)
The diameter of single walled Carbon nanotube (CNT) was calculated to 1.95 nm

Summary

Introduction

Reduction of energy loss in a semiconductor device becomes more challenging task a day. Her research focuses on the development of new nano electronic devices to advance the fields of information technology and biosensors. She is especially interested in the nanotechnologies and novel devices concepts. A set of electrical properties of CNT is analyzed to propose a novel model of the nanotube that exhibits low energy consumption compare to other electronics devices. Some of them are short channel effects, hot carrier effect and drain induced barrier lowering (Al-Shaggah, Rjoub, & Khasawneh, 2014) Due to these effects a new device has been introduced named carbon nanotube field effect transistor (CNTFET) (Fedawy, Fikry, Alhenawy, & Hassan, 2012). Modeling of nanotube is described at section two. Implementation and application of the nanotube is described in section three. Section 4 shows the results of the proposed work

Modeling of the tube

Implementation of the tube

Results and discussions

Conclusion