Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

Abstract

A novel capacitance coupling complementary dual-direction silicon-controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5-μm BCD process. The trigger voltage of CCCDSCR can be adjusted by coupling capacitance to meet different protection requirements. Compared with traditional lateral double-diffusion NMOS, LDSCR, stacked field-oxide device, and stacked low-voltage-triggering SCR devices, the CCCDSCR has appropriate low trigger voltage of 27.3 V, high holding voltage of 24.3 V, and highest figure of merit (FOM) according to our defined FOM.