Novel Braceletlike BiSbX3 (X = S, Se) Monolayers with an In-Plane Negative Poisson's Ratio and Anisotropic Photoelectric Properties.

Abstract

In this work, we predict two novel two-dimensional (2D) auxetic materials, BiSbX3 (X = S, Se) monolayers, through first-principles calculations. Attributed to their special braceletlike structure, the in-plane negative Poisson's ratio (NPR) of BiSbS3 and BiSbSe3 monolayers are as high as -0.25 and -0.26, respectively. The phonon dispersion calculations, ab initio molecular dynamics simulations, and elastic constants calculations demonstrate that these two monolayers possess excellent dynamic, thermal, and mechanical stabilities. The band gap values of BiSbS3 and BiSbSe3 calculated at the HSE level by considering the spin-orbit coupling (SOC) effect are 1.68 and 1.20 eV. The anisotropic carrier mobility and superior optical absorption indicate that they may shine in the next generation of electronic and optoelectronic devices. All of these discoveries not only enrich the types of auxetic materials but also provide a structural reference for designing new auxetic materials on the molecular level. Furthermore, they can provide theoretical guidance for future applications of BiSbX3 (X = S, Se) monolayers in various fields.