Abstract
BF+ implantation is used for the first time for the formation of source/drain (S/D) junctions in Ge MOSFETs. It offers a higher B activation level ( $\sim 2.0\times 10^{20}$ cm $^{-3})$ and a shallower junction depth in Ge compared with B+ and BF2+ implantation for the same projected range, after rapid thermal annealing at 800 °C. Germanium pMOSFETs using BF+ implantation demonstrate a high ON/OFF ratio of $\sim 10^{7}$ and an enhancement of ON current, due to the reduction of S/D series resistance compared with B+ or BF2+ implanted junctions.
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