Abstract
BF+ implantation is used for the first time for the formation of source/drain (S/D) junctions in Ge MOSFETs. It offers a higher B activation level ( $\sim 2.0\times 10^{20}$ cm $^{-3})$ and a shallower junction depth in Ge compared with B+ and BF2+ implantation for the same projected range, after rapid thermal annealing at 800 °C. Germanium pMOSFETs using BF+ implantation demonstrate a high ON/OFF ratio of $\sim 10^{7}$ and an enhancement of ON current, due to the reduction of S/D series resistance compared with B+ or BF2+ implanted junctions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
