Abstract
AbstractFor highest efficiency Cu(In,Ga)Se2 thin‐film solar cells, the V‐shaped bandgap grading can result in residual transmission through the absorber layer and parasitic absorbance in the Mo back contact. To improve the back contact reflectance, absorbers were grown in a multistage process on Mo/Al/InZnO substrates. Additionally, ultrathin layers of Mo and MoSeX were introduced at the InZnO‐absorber interface. Effects of the different back contacts on device performance, absorber morphology, and composition are characterized and discussed. Finally, a numerical model is proposed to understand the experimentally observed increase in device current density of 0.3 to 0.8 mAcm−2.
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