Abstract
A novel asymmetric MOSFET structure is proposed which provides an excellent tradeoff between current drivability and manufacturability for planar MOSFET technology. To achieve this, the "corner effect" is utilized to suppress short channel effects, while degradation in current drivability caused by the corner effect is avoided by an asymmetric design. Using simulation, it is shown that this structure enlarges the tolerance for the junction depth of source/drain extensions by a factor of three, without sacrificing current drivability, compared to the optimal symmetric structure also found in this work. This asymmetric structure is a superior design strategy for planar MOSFETs and can be considered as one of the most promising candidates for 32nm-node MOSFETs
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