Novel Approach to the Extraction of Transistor Parameters from Large Signal Measurements

Abstract

Novel analysis concepts have been developed for the extraction of transistor characteristics and parameters from large signal RF measurements. The techniques developed allow for the-direct extraction of the RF current and voltage constraints associated with the transistor output characteristic (knee voltage and breakdown characteristics) and for the direct extraction of the, transistor RF large signal transfer characteristic. The importance of this new approach is that these parameters, measured under real RF operating conditions, can be compared directly with those determined from DC or small signal S-parameter measurements. This comparison is essential if large signal RF measurements are to be utilized in the optimization of high power transistor structures and in the development of accurate non-linear CAD models.