Abstract
We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800°C, which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.
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