Novel analysis of impact of single dopants on sub-15nm channel length FDSOI NMOSFETs utilizing cryogenic measurements

V Deshpande,R Wacquez,L Tosti,B Voisin,M Vinet,O Weber,B Roche,T Poiroux,O Faynot,J Mazurier,P Perreau,F Andrieu,L Brevard,M Sanquer,X Jehl

doi:10.1109/soi.2011.6081795

Novel analysis of impact of single dopants on sub-15nm channel length FDSOI NMOSFETs utilizing cryogenic measurements

V Deshpande, R Wacquez + Show 13 more

https://doi.org/10.1109/soi.2011.6081795

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Publication Date: Oct 1, 2011

Citations: 2

Affiliation: Université Grenoble Alpes, Grenoble Institute of Technology, CEA Grenoble, Institut Nanosciences et Cryogénie, Atomic Energy and Alternative Energies Commission, CEA LETI

#Single Dopants #FDSOI NMOSFETs + Show 8 more

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Abstract

In FDSOI NMOSFETs with sub-15 nm channel lengths, the presence of single diffused dopants is evidenced by cryogenic conductance measurements (down to 4 K). Based on the magnitude of conductance through these single dopants at 4 K, their lateral position in the channel is estimated. This cryogenic spatial analysis relates to room temperature characteristics and allows explaining the dispersion observed in the device characteristics.

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