Abstract
Novel AgGa0.95In0.05Ge3Se8 single crystalline alloys were grown via Bridgman–Stockbarger route and characterized by XRD analysis. The titled compounds were used for laser stimulated piezoelectricity studies. Following the results of differential thermal method as well as XRD phase analysis the phase equilibrium diagrams of AgGaGe3Se8–AgInGeSe4 and AgGaGe3Se8–‘AgInGe3Se8’ sequences were built. The specific features of phase diagrams demonstrate the possible high sensitivity of the such kind of crystal to external light and mechanical fields. Piezoelectric coefficient of the crystal was found to be strongly sensitive to illumination with 532 nm cw laser light which led to up to 90% decrease of the piezoelectricity. Photo-thermal contribution to the observed drop in piezoelectric voltage was excluded.
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