Abstract
Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm2/Vs at $\text{V}_{\mathrm{ D}}$ of 5 V, high on/off ratio of $\sim 10^{6}$ , and stable threshold voltage ( $\text{V}_{\mathrm{ Th}}$ ) of −0.35 V. Additionally, the optical properties of the proposed FET include excellent $\text{V}_{\mathrm{ Th}}$ shift and photocurrent ( $\text{I}_{\mathrm{ photo}}$ ) with high linearity under various red-light illumination. The proposed enhancement-load type inverter device shows reliable electrical and optical characteristics with an inverter gain of 0.7 at $\text{V}_{\mathrm{ DD}}$ of 1 V and linear photo-response in terms of inverter gain and voltage shift, demonstrating promising potential in the field of integrated electronics for optoelectronic applications.
Highlights
Oxide semiconductors have gained tremendous attention in the field of integrated electronics due to their highelectrical performance, large-area fabrication, and simple processing techniques [1], [2]
We have introduced a photo-induced inverter device based on amorphous silicon indium zinc oxide (a-SIZO) channel material, exhibiting high-performance electrical and optical properties with highly linear photosensitivity and inverting properties with respect to the incident light power
The material properties of deposited a-SIZO were characterized in terms of x-ray photoelectron spectroscopy (XPS), atomic force microscopes (AFM) morphology, and Transmission electron microscopy (TEM) at ambient conditions
Summary
Oxide semiconductors have gained tremendous attention in the field of integrated electronics due to their highelectrical performance, large-area fabrication, and simple processing techniques [1], [2]. Among the various types of photo-sensitive devices, amorphous oxide semiconductors (AOSs) are exceptionally promising channel materials due to their visible spectral wavelength detectivity and intensity-selectivity of incident light [9], [10] Despite their integration in high-performance FET devices, much effort is still required to investigate the properties of AOS-based. We have introduced a photo-induced inverter device based on amorphous silicon indium zinc oxide (a-SIZO) channel material, exhibiting high-performance electrical and optical properties with highly linear photosensitivity and inverting properties with respect to the incident light power. The proposed a-SIZO based photo-induced inverter presented in this article was initially intended to enable excellent optical measurements in integrated electronic circuits, we believe that the present work may provide a new platform to combine IC and optoelectronics for futuristic applications
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