Abstract
The spin-lattice relaxation rates of shallow donors in wurtzite-type semiconductors are calculated. The admixture of the excited p -states with the ground 1 s -state through the k -linear term in the conduction band and the trigonal component of the impurity potential plays an important role in the present relaxation mechanism in contrast with the case of the many valley semiconductors. In particular, it is shown that the k linear term in the \(\varGamma_{7}\) conduction band may contribute to the spin-lattice relaxation rate of shallow donors in CdS at liquid helium temperatures, taking into account the concentration dependent relaxation process, This relaxation process occurs through the hopping motion of donor electrons accompanied by reversal of spin orientation.
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