Abstract
A thin blocking structure is incorporated in the gate-stack of heterojunction field-effect transistor (HJFET) devices to substantially suppress the gate current when the gate heterojunction is forward-biased. As a result, normally-OFF HJFET devices with MOSFET-like characteristics are obtained. The HJFET devices are comprised of gate, source, and drain regions formed by plasma-enhanced chemical vapor deposition on thin-film crystalline Si substrates at temperatures below 200°C. The ON/OFF ratios larger than 106, operation voltages as low as 1 V, and subthreshold slopes of ~85 mV/decade are demonstrated. The HJFET devices can be integrated with MOSFET devices fabricated on the same crystalline Si substrates to form complementary circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.