Abstract
GaN is promising for high-power, high-temperature devices due to some of its large bandgap, high critical electric field, and high saturation velocity compared with Si and SiC. The MOSFET structure can be operated at a positive threshold voltage in the normally-off mode, which is preferable for power transistors in terms of fail-safe operation. In order to realize MOSFET operation, low resistance in the n + -contact layer and good interface quality at SiO2/GaN are strongly required. We could reduce the interface state density at SiO2/GaN by annealing at 900 o C for 30 min. Furthermore, we successfully realized the formation of the n+ contact layer by annealing at 1260 o C for 30 s. Finally, we have fabricated GaN MOSFETs and have achieved more than 2.5 A operation in the normally-off mode at more than 250 o C. The breakdown voltage was more than 1550 V.
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