Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

Abstract

In this paper, we present a novel nonvolatile-random access memory (RAM) cell design based on a “normally-off memory architecture” using a perpendicular spin torque transfer-magnetic random access memory (STT-MRAM) based on a four-transistors static random access memory (SRAM) in order to reduce the operating power of mobile processors. After the cell design concept and basic operation are proposed, a stable and reliable operation for read/write is confirmed by circuit simulation.