Abstract
With the help of MgO mask layer, LiNbO3 (LN) ferroelectric films were etched effectively using wet etching method and LN/AlGaN/GaN ferroelectric field-effect transistors (FFETs) were fabricated. The electrical properties of the FFETs were studied. Due to the ferroelectric polarization nature of LN films, normally-off characteristics with a turn-on voltage of about +1.0V were exhibited in the device. The operation mechanisms of the LN/AlGaN/GaN FFET devices were proposed by the numerical calculations of the electronic band structure and charge distribution.
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