Abstract

The frequency distribution of the acoustic phonons emitted from a biased metal-insulator-metal normal-state tunnel junction has been studied. Electrons tunneling across the insulating layer form an excited population with a range of energies up to \ensuremath{\sim}${\mathit{eV}}_{\mathit{B}}$ above the Fermi level and then relax, producing a phonon spectrum with a frequency cutoff at the same characteristic value. Normal-state tunnel junctions made from aluminum have been produced and phonon spectra determined by using the stress-tuned splitting of boron acceptors in silicon as a spectrometer. It has been shown that, in the range \ensuremath{\sim}1--4 meV (\ensuremath{\sim}250--1000 GHz), the second differential of the signal with respect to junction bias (${\mathrm{\ensuremath{\partial}}}^{2}$P/\ensuremath{\partial}${\mathit{V}}_{\mathit{B}}^{2}$) is quasimonochromatic, having a spectrum of an approximately Gaussian form with the peak occurring at an energy of ${\mathit{eV}}_{\mathit{B}}$ and a half width of \ensuremath{\sim}6${\mathit{kT}}_{\mathit{e}}$.

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