Abstract
High-quality thin NbN films are very crucial for realizing quantum devices. Here, we investigated electrical transport and noise properties of a series of thin NbN films of various thicknesses grown on r-cut sapphire substrate using a DC magnetron sputtering technique. The films exhibit non-uniform thickness dependences for superconducting transition temperature (Te ) and normal-state resistivity. Morphological characterization of NbN samples of various thicknesses reveals uniform structure in thin films and granular structure in thick films. By measuring transport and noise properties in a normal state, we observe that the granular structure of NbN films does not have a strong effect on resistivity and does not cause an additional source of current noise.
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