Abstract

Normal metal, ohmic contacts to high-temperature superconductor (HTSC) materials will be used to form via structures between HTSC interconnect levels, and also, substrate bonding pads in a superconducting multichip module (SMCM). Specific contact resistivities below 10 −8 Ω cm 2 will be required for such contacts to control signal attenuation and local contact heating of the LN 2cooled SMCM. Previous work on normal metal/superconducting contacts has not focused on metallization schemes which will be stable during subsequent high-temperature processing. Metal contacts of gold, silver, and palladium were formed on superconducting thin films of YBa 2Cu 3O 7-δ via evaporation and sputtering through a shadow mask followed by annealing in various ambients and at several temperatures. Palladium contacts oxidized readily during anneal, and sputtered gold contacts required additional processing and exhibited higher specific contact resistivities. The best contacts were obtained by a controlled-cooling oxygen anneal of evaporated gold or silver, as indicated by normal-state specific contact resistivities of 3 × 10 −5 Ω cm 2 and 4 × 10 −5 Ω cm 2 , respectively. This work differs from previously published results by describing contacts which required no extensive preparation of the HTSC surface and were stable to 700 °C, indicating these contacts would be compatible with subsequent high-temperature processing of the additional HTSC layers required in a multi-level SMCM.

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