Abstract
Nonvolatile three-terminal operation is demonstrated using a Pt/Ta2O5−x/Pt, Pt structure, by controlling oxygen vacancy drift to make/annihilate a conductive channel between a source and a drain. The as-fabricated device is in an off-state. Application of a positive gate bias moves oxygen vacancies in a Ta2O5−x layer towards a channel region, making the channel region conductive. The conductive channel remains even after unloading the gate bias. Application of a negative gate bias, which moves the oxygen vacancies back towards the gate electrode, is required to turn off the device. The device shows a high ON/OFF ratio of up to 106.
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