Abstract
In the current work, Resistive Switching characteristics in Tungsten Oxide (WO3) thin films fabricatedby rf-magnetron sputtering technique on ITO/corning glass substrate, under Glancing angle mode configurationhave been studied. Bipolar Resistive switching behavior is observed in these films using top Au contacts. The prepared metal-insulator-metal (MIM) structure (Au/WO3/ITO), having asymmetric electrodes, resulted in appreciable resistive-switching properties with the ratio of resistance approximately about7 between the high resistance state (HRS) and low resistance state (LRS) and a low set voltage of around 2.94 V, at room temperature. These characteristics can be further utilized in non-volatile memory-device applications.
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