Abstract
The authors propose a nonvolatile multiple-valued memory based on a nonlocal spin valve structure. Multibit informations are formed by changing the magnetization configuration in a nonlocal voltage probe consisting of a magnetic multilayer. A simple calculation method for the spin-accumulation voltage induced in lateral ferromagnetic/nonmagnetic multilayered hybrid structures is also developed on the basis of the spin resistance model. The developed model enables us to find the thickness of each ferromagnetic layer for the optimized operation of the multiple-valued memory.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
