Abstract
This paper co-designs a network and non-volatile memory system for a fifth generation (5G) multiple-tier network. Because a 5G network has shorter latency and wider bandwidth compared with a 4G network, the non-volatile memory system becomes a bottleneck. From the bottom to the top of the multiple-tier network, edge devices/machines, edge servers, and cloud centralized servers play different types of roles and handle different types of data. Thus, different types of non-volatile memory are required for cloud centralized servers, edge servers, and edge devices/machines. This work employs three-dimensional single-level cell (3D-SLC) NAND flash memory for edge servers and resistive RAM (ReRAM) for cloud centralized servers. To achieve short latency and low cost of the non-volatile memory system, distributed multiple write for 3D-SLC NAND flash memory and hierarchical multiple-deck ReRAM are proposed. By using an evaluation platform of the network and non-volatile memory co-design system, the proposed non-volatile memory system is defined as a network bottleneck or memory bottleneck.
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