Non-volatile memory field effect transistor composed of ferroelectric Mn-doped InP thin films and single-layer MoS2 channel

Abstract

Ferroelectric properties can be generated by doping semiconductor thin films of ZnO and InP with a transition metal such as Mn. Furthermore, ferroelectric thin films exhibiting ferroelectric properties can be utilized as non-volatile memory components, potentially replacing conventional flash memory. In this study, we investigated non-volatile memory properties using field-effect transistors (NVMFET) fabricated from Mn-doped InP (MIP) thin films and single-layer MoS2 sheets. The 5 % Mn-doped MIP thin films exhibited a larger remanent polarization of 8.2 μC/cm2 compared to the 3 % Mn-doped films with 5.1 μC/cm2. The NVMFET devices, operating as non-volatile memory devices, demonstrated a distinct memory window for current changes. Notably, enhancing the remanent polarization of the 5 % Mn-doped MIP thin film further improved the memory window of the corresponding NVMFET.