Abstract
We report the operation of a potential nonvolatile bistable capacitor memory element consisting of a metal gate, a 170 nm thick ferroelectric Langmuir–Blodgett film of vinylidene fluoride (70%) with trifluoroethylene (30%) copolymer, and a 100 nm thick silicon-oxide insulating layer, all deposited on an n-type silicon semiconductor substrate. The device exhibited clear capacitance hysteresis as the gate voltage was cycled between ±25 V, with a capacitance dynamic range of 8:1 and threshold voltage shift of 2.8 V. The results are in good agreement with the model of Miller and McWhorter [J. Appl. Phys. 72, 5999 (1992)].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
