Abstract

Among the many possible device configurations for organic memory devices, organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally, the prospects and problems of OFETs memory are discussed.

Highlights

  • Among the many possible device configurations for organic memory devices, organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media

  • Guo et al reported OFET multibit storage devices based on pentacene or copper phthalocyaine (CuPc), which were fabricated using polystyrene (PS) or polymethylmethacrylate (PMMA) modified SiO2 as dielectric layer through light-assisted programs [21]

  • We review the recent progress in classes of OFET-based memory including floating gate, polymer electret, ferroelectric and several other types of OFET memories with unique configurations

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Summary

Parameters used to characterize OFET memory

There are several parameters used to characterize an OFET memory, such as the operating voltage, memory window, program/erase speed, retention time and endurance. For OFET memory, the memory window is defined as the threshold voltage (Vth) shift between the different charge storage states. The program/erase speed is defined as the minimum time required to program/erase the device. The program/erase speed is still in the order of micro to milliseconds. A retention time of more than 10 years at room temperature is desirable, but most organic non-volatile memory devices do not achieve this. Endurance is the ability of the memory device to withstand repeated program/erase cycles. For non-volatile memory devices, the required endurance is about 106 cycles, but this is seldom achieved for organic devices at present

Floating gate OFET memory
Polymer electret OFET memory
Ferroelectric OFET memory
Several other types of OFET memories with unique configurations
Applications and prospects of OFET memory
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