Nonvolatile memory devices based on electrical conductance tuning in poly(N-vinylcarbazole)–graphene composites

Abstract

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(N-vinylcarbazole) (PVK)–graphene composites, are fabricated. The current density–voltage characteristics of the fabricated device show different electrical conductance behaviors, such as insulator behavior, write-once read-many-times (WORM) memory effect, rewritable memory effect and conductor behavior, which depend on the content of graphene in the PVK–graphene composites. The OFF and ON states of the WORM and rewritable memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of −1.0V. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.