Abstract
We investigated the effect of small-molecule electron-transport (Alq 3) and hole-transport (α-NPD) bilayers on the nonvolatile memory characteristics of small-molecule memory cells embedded with Ni nanocrystals. With increasing thickness of the hole-transport layer, the on-state current ( I on) and memory margin ( I on/ I off ratio) decreased, the retention time decreased, and the standard deviation of I on and I off during erase-and-program cycles increased. These results indicate that the N,N’-bis (1-naphthalene)-1,1’biphenyl4,4”diamine layer in small-molecule-bilayer memory cells behaves as an electron-transport layer rather a hole-transport layer and that the dominant carriers in those memory cells are electrons rather than holes.
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