Abstract
Memristor, one of the fundamental circuit elements, has promising applications in non-volatile memory and storage technology as it can theoretically achieve infinite states. Information can be stored independently in these states and retrieved whenever required. In this paper, we have proposed a non volatile memory cell based on memristor emulator. The circuit is able to perform read and write operations. In this memristor based memroy cell, unipolar pulse is used for writing and bipolar pulse is used for reading. Unlike other earlier designs, the circuit does not need external read/write enable switches to switch between read and write operations; the switching is achieved by the zero average bipolar read pulse given after the completion of write cycle. In our proposed memristor based memory cell, single bit can be read and any voltages from 0 to 5 volts can be written. Mathematical analysis and the simulation results of memristor emulator based read write circuit have been presented to confirm its operation.
Highlights
Memristor was first postulated by Leon Chua in 1971 as a fundamental circuit element [1]
Memristor is a natural application for resistive random access memory (ReRAM) technology [4]; neuromorphic computation using ReRAM technology is becoming popular [2, 5,6,7,8,9]
By controlling programming signal width and/or amplitude, memristor can be taken to any state; two states: high resistance state (HRS) and low resistance state (LRS) are commonly used and they represent bit 1 and bit 0 respectively [2, 10,11,12]
Summary
Memristor was first postulated by Leon Chua in 1971 as a fundamental circuit element [1]. When the current flow is stopped, memristor retains its final state This state retention property of memristor makes it useful as a non-volatile memory element [2, 3]. Lopez et al [14] and Yu et al [17] have proposed a floating memristor emulator circuit based on current conveyors. Memristor memory cell architecture based on the memristor model has been proposed by [11, 12, 18, 19]. Sarwar et al [19] has designed memristor based nonvolatile random access memory, but the memristor in their work uses Spice model. Use of unipolar and bipolar pulses for reading and writing operations respectively could provide efficient architecture for the implementation of memristor-based memory. MOS Field Effect transistors can be employed to design a constant current source
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