Abstract
Abstract Multiferroic materials exhibit both ferroelectricity and ferromagnetism, and their magnetoelectric effects can be modulated by both magnetic and electric fields. Thus, they exhibit great potential in next-generation data memory devices. In this study, we implemented an eight-state memory prototype based on room-temperature single-phase multiferroic Sr 3 Co 2 Fe 24 O 41 . Data were imported by a poling procedure with electric and magnetic fields and derived visa electric polarization, P m , or the magnetoelectric coefficient, α m . This memory prototype possesses the advantages of a single structure, being easy to integrate, having a high storage capacity and a high stability. In this research, we enriched the magnetoelectric coupling performance of multiferroic materials, which demonstrates their possibilities for applications in the memory field.
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