Abstract
Nonvolatile manipulation of transport and magnetic properties by external electric field is significant for information storage. In this study, we investigate the electric field control of resistance and magnetization in a magnetoelectric heterostructure comprising an electronic phase-separated La0.325Pr0.3Ca0.375MnO3 (LPCMO) thin film and a ferroelectric (011)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) substrate. In a room-temperature poled sample, the metal-to-insulator transition temperature of an LPCMO film increases and the resistance decreases with variation in the effect of the remnant strain. Meanwhile, the increase in the magnetization of the sample is observed as well. This effect would be beneficial for the development of novel storage devices with low power consumption.
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