Abstract
This study proposes a bipolar resistive random-access memory (RRAM), which is fabricated using an aluminum oxide (AlO x ) resistive switching (RS) layer. The RRAM shows a large memory window of 106 at a low read voltage of 0.5 V. In addition, high switching speed, long retention time, and superior read-disturb immunity are observed. AlO x layers are prepared by a thermal oxidation growth process. Aluminum metal films deposited on n+-Si wafers are oxidized at O2/(O2 + N2) flow rate ratios of 50%–100%. Al/AlO x /n+-Si device shows no RS behavior when the AlO x is grown in a pure O2 environment. As the O2/(O2 + N2) flow rate ratio decreases to 50%, Al/AlO x :N/n+-Si device reveals stable bipolar RS characteristics. A filamentary mode based on oxygen interstitial and Al vacancy is proposed to explain the difference in electrical characteristics of AlO x devices prepared at different O2 flow rates.
Published Version
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