Abstract
A new method of fabricating a one-dimensional (1D) electron system using a conventional GaAs/AlGaAs heterostructure with metallic gates has been demonstrated. The transport properties of 1D wires with various lengths up to 6400 nm have been studied. A clear conductance quantization, which has never before been observed in a gate-defined 1D wire system, was observed. This confirms that the 1D wire is indeed clean without a significant local resonant state in the conduction channel. Also, the conductance step height was found to be less than 2e2/h for wires longer 3200 nm. Such nonuniversal conductance quantization is regarded as a fingerprint of a Luttinger liquid. The result confirms that a 1D electron system can be fabricated by using a conventional method.
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