Abstract
Realizing topological insulators in commonly used III-V semiconductors is of great importance for their potential application in spintronics and quantum computing. Here we propose a general strategy to realize topological insulators in conventional III-V semiconductors by bismuth substitution and external strain. Based on first-principles calculations, we identify that AlBi (GaBi and InBi) become topological insulators (semimetals) under proper external strain by directly calculating ${\mathbb{Z}}_{2}$ invariants and surface states. Furthermore, we demonstrate that a topological phase transition can be induced by Bi substitution in common III-V semiconductors like GaAs. These proposed topological insulators can be easily integrated into various semiconductor electronic devices and modulated by well-developed modern semiconductor technologies.
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