Abstract
Ceramic particles, such as titanium oxide and indium tin oxide, are expected to be used as electric or catalytic materials for various applications. In this work, we progressed to employ the irradiation with an electron beam as the nonequilibrium reaction field for ceramic composition, and we successfully obtained the basic technology for a ceramic thin-film fabrication using a field emission (FE) electron beam with low energy resolution having a half width under 100 meV that had a homogeneous planar electron emission as the nonequilibrium reaction field. In particular, ZnO particles synthesized by electron beam irradiation show selective crystal bridging along the c-axis during FE electron beam irradiation, which is important for synthesizing poly-ZnO crystals without a heating process, because the energy fluctuations of FE electron beams are small and affect the directionality of ZnO crystal growth along the c-axis. This accomplishment may make a significant contribution to the analysis of the formation mechanism of ZnO particles with a uniform morphology and crystal structure by the FE electron beam during the crystallization. Moreover, we will be able to provide basic elements for next-generation nanodevices with highly functional properties by controlling each terminal crystal interface of metals, ceramics, and semiconductors with this technique.
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