Abstract
This paper treats a problem of nonstoichiometry inTiO2−ythin films deposited by reactive sputtering at controlled sputtering rates. Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometryyin the bulk and at the surface ofTiO2−ylayers. The critical review of these experimental methods is given. Defect structure responsible for the electrical resistivity of rutileTiO2is discussed.
Highlights
Titanium dioxide is considered as one of the most important materials from the point of view of both fundamental properties and applications
In many devices that operate at high temperatures, TiO2 is already converted into rutile
The following comments to the analysis presented above should be taken into account
Summary
Titanium dioxide is considered as one of the most important materials from the point of view of both fundamental properties and applications. These applications rely on excellent chemical stability of TiO2 in hazardous environments, hardness, high refractive index, and many other remarkable features. Titanium dioxide TiO2 exists in three polymorphic forms: brookite, rutile, and anatase. Anatase and brookite as metastable phases transform irreversibly into rutile over the temperature range of 973 K–1173 K [1]. Rutile is a high-temperature, stable phase, it is not surprising that this particular polymorphic form has been the most thoroughly investigated. The majority of crystal growth techniques yield titanium dioxide in the rutile phase. In many devices (e.g., gas sensors) that operate at high temperatures, TiO2 is already converted into rutile
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