Abstract
Nonstatic transport effects in the permeable base transistor (PBT) are included in a two-dimensional multiparticle Monte Carlo (MC) analysis. This approach predicts charge depletion between the gate electrodes as V GS is increased over 0.5 V, as opposed to the accumulation of a net negative space charge predicted by the conventional static mobility model. More than a 60-percent increase in unity-current gain-frequency f T , of the PBT was predicted compared with the conventional result.
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