Abstract
Carrier transfer in $\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ asymmetric quantum dot pairs has been studied by means of continuous-wave and time-resolved photoluminescence in a bilayer $\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ quantum dots system. The dependence of the tunneling time on the thickness of the separation layer is determined and the tunneling time is found to span the range from $250\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}2500\phantom{\rule{0.3em}{0ex}}\mathrm{ps}$. A microscopic model of carrier transfer, including nonresonant electron tunneling from a direct into a cross exciton state, with subsequent generation of two direct excitons in adjacent quantum dot layers, is proposed.
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