Abstract

Measurements of threshold pumping power as a function of beam voltage and measurements of output power as a function of input power, with beam voltage as a parameter, strongly suggest that surface recombination contributes heavily to nonradiative transitions in electron-beam pumped GaAs lasers at voltages up to 30 kV, at both 4.2°K and 77°K.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call