Nonradiative-recombination-enhanced defect-structure trans- formation in low-temperature gamma -ray-irradiated InP.

Abstract

Low-temperature $\ensuremath{\gamma}$-ray irradiation and subsequent minority-carrier injection are found to enhance a defect-structure transformation from a major irradiation-induced deep hole trap (${E}_{v}+0.32$eV) to a deeper hole-trap center (${E}_{v}+0.52$eV) in $p$-type InP. Direct experimental evidence is shown to demonstrate the role of the 0.32-eV level as an efficient nonradiative recombination center which competes with other radiative transition channels. The results show a recombination-enhanced reaction mechanism at the anion-displacement center with strong electron-phonon couplings.