Nonperturbative theory of effective Hamiltonians for deformations in two-dimensional materials: Moiré systems and dislocations

Abstract

We provide a method for the generation of effective continuum Hamiltonians that goes beyond the well known k.p method in being equally effective in both high, and low (or no) symmetry situations. Our approach is based on a surprising exact map of the two-centre tight-binding method onto a compact continuum Hamiltonian, with a precise condition given for the hermiticity of the latter object. We apply this method to a broad range of low dimensional systems of both high and low symmetry: graphene, graphdiyne, {\gamma}-graphyne, 6,6,12-graphyne, twist bilayer graphene, and partial dislocation networks in Bernal stacked bilayer graphene. For the single layer systems the method yields Hamiltonians for the ideal lattices, as well as a systematic theory for corrections due to deformation. In the case of bilayer graphene we provide a compact expression for an effective field capable of describing any stacking deformation of the bilayer; twist bilayer graphene, as well as the partial dislocation network in AB stacked graphene, emerge as special cases of this field. For the latter system we find (i) charge pooling on the mosaic of AB and AC segments near the Dirac point and (ii) localized current carrying states on the partials with the current density characterized by both intralayer and interlayer components.