Abstract
An extension of the modified local density approximation (MLDA) to account for quantum confinement effects in narrow-band multivalley semiconductors is presented. The original MLDA model is also extended to account for confinement in double-gate and fin-shaped FET devices. The extended model is validated against self-consistent Poisson-Schrodinger results for various double-gate metal-oxide-semiconductor structures with InGaAs as the semiconductor material.
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