Abstract
Presented in this paper is the result of a study on the utilization of Al-doped ZnO (AZO) and Ti-doped ZnO (TiZO) as a blocking layer (BL) in Dye-Sensitized Solar Cells (DSSCs). The DSSCs structure was FTO/BL/TiO2/dye/electrolyte/Pt on FTO. The crystallinity and crystallite size of those BLs were shown to be affected by the dopant type and its concentration. From the photovoltaic characteristics of those DSSCs, the TiZO layer showed better contribution in enhancing the open voltage as a BL in comparison to the AZO. The effect of these layers on the solar cell characteristics in the fabricated DSSCs was found to be not merely due to the difference in their Ohmic resistance. There is also the contribution of back recombination kinetics from the photoexcited electrons via the dopant states in the AZO and TiZO layers, which are different among the layers due to the difference in dopant states distributions below their conduction bands.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Nonlinear Optical Physics & Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
