Abstract
Non-Markovian carrier-carrier memory effects calculated for the wide-bandgap GaN optical amplifier are shown to be important for time scales of up to 200fs and 50fs for the holes and electrons, respectively. Ultrafast carrier-carrier scattering processes, which occur within a relatively small energy range, manifest in correlation times which are approximately double those calculated for GaAs. Implications for nonlinear saturation and optical gain studies of GaN lasers are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
